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AEGIS
SEMICONDUTORES LTDA.
A5A:1250.XX
VOLTAGE RATINGS
Part Number VRRM , VR (V) rep. peak reverse voltage TJ = 0 to 180OC A5A:1250.02 A5A:1250.04 A5A:1250.06 A5A:1250.08 A5A:1250.10 A5A:1250.12 200 400 600 800 1000 1200 Max. VRSM , VR (V) Max. non-rep. peak reverse voltage
O
TJ = -40 to 0 C 200 400 600 800 1000 1200
TJ = 25 to 180 C 300 500 700 900 1100 1300
O
MAXIMUM ALLOWABLE RATINGS
PARAMETER TJ Junction Temperature Tstg Storage Temperature IF(AV) Max. Av. current @ Max. TC VALUE -40 to 180 -40 to 180 1250 125 1980 15650 IFSM Max. Peak non-rep. surge current 16400 A 18600 19500 1275 I2t Max. I2t capability 1390 1454 1585 I2t1/2 Max. I2t1/2 capability F Mounting Force 17350 1250 kA2s1/2 N.m kA2s 50 Hz half cycle sine wave 60 Hz half cycle sine wave t = 10ms t = 8.3 ms t = 10ms
O Initial T J = 180 C, no voltage applied after surge. O Initial T J = 180 C, no voltage applied after surge. O
UNITS
O O
NOTES O 180 half sine wave
C C A C A 50 Hz half cycle sine wave 60 Hz half cycle sine wave
IF(RMS) Nom. RMS current
O Initial T J = 180 C, rated VRRM applied after surge.
O Initial T J = 180 C, rated VRRM applied after surge.
t = 8.3 ms O Initial T J = 180 C, no voltage applied after surge. I2t for time t x = I2t1/2 * tx1/2. (0.1 < tx < 10ms). -
AEGIS
SEMICONDUTORES LTDA.
A5A:1250.XX
CHARACTERISTICS
PARAMETER VFM Peak forward voltage VF(TO)1 Low-level threshold VF(TO)2 High-level threshold rF1 Low-level resistance rF2 High-level resistance IRM Peak reverse current RthJC Thermal resistance, junction-to-case RthCS Thermal resistance, case-to-sink wt Weight Case Style MIN. ----------------------TYP. 1.40 --------20 --------255(9) TO-200AC MAX. UNITS 1.57 0.79 0.853 0.237 0.205 50 0.050 0.054 0.055 0.015 --O O O
TEST CONDITIONS Initial T J = 25OC, 50-60Hz half sine, Ipeak = 3267A. TJ = 180OC Av. power = V F(TO) * IF(AV) +rF * [IF(RMS)]2 Use low values for IFM < pIF(AV) TJ = 180 OC. Max. rated VRRM
V V mW mA
C/W DC operation, double side C/W 180O sine wave, double side
C/W 120O rectangular wave, duble side Mtg. Surface smooth, flat and greased. Single side. O C/W For double side, divide value by 2. -----
g(oz.)
180
Maximum Allowable Case Temperature Maximum Allowable Case Temperature (C)
180 170 160 150 140 130 120 110 100 90 80 0
Maximum Allowable Case Temperature
Maximum Allowable Case Temperature (C)
170 160 150 140
30
30 60 90 120 180
130
60
120 110 100
*Sinusoidal waveform
90 120 180
DC
0
200
400
600
800
1000
1200
1400
500
1000
1500
2000
Average Forward Current (A)
*Rectangular waveform
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1250.XX
Maximum Average Forward Power Loss Maximum Average Forward Power Loss (W)
30
18000
14000 12000 10000 8000
Maximum Average Forward Power Loss
30
Maximum Average Forward Power Loss (W)
16000 14000 12000 10000
60
60
8000 6000 4000 2000 0 0
*Sinusoidal waveform 90 120 180
6000
90
4000 2000 0
*Rectangular waveform
120 180 DC
500
1000
1500
2000
0
500
1000
1500
2000
Average Froward Current (A)
Average Forward Current (A)
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
10000
Forward Voltage Drop
0.1
Transient Thermal Impedance ZthJC
1000
Transient Thermal Impedance ZthJC (C/W)
1.5 2.0 2.5 3.0 3.5
Instantaneous Forward Current (A)
0.01
25C 125C
100 0.5 1.0
1E-3 1E-3
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Time (s)
Fig. 5 - Forward Voltage Drop Characteristics
Fig. 6 - Transient Thermal Impedance Characteristics
AEGIS
SEMICONDUTORES LTDA.
A5A:1250.XX
TO-200AC
Fig. 7 - Outline Characteristics

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